Abstract
The thermal annealing effects on a single-field emitter fabricated by beam-assisted processing were investigated from the viewpoint of the leakage current between the gate and cathode. The cathode current of the field emitters before annealing did not show a linear dependence in Fowler–Nordheim (FN) plots due to the leakage current. However, the current showed a linear dependence in FN plots at and above 200 °C. Thermal annealing increased the emission efficiency. The maximum efficiency was almost 100% after annealing at 750 °C. The percentage of working nanoelectron sources was also increased by annealing T⩾500°C. The postannealing is effective in reducing the leakage current of the field emitters because of the removal of contaminants arising from the beam-induced process.
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