Abstract
AbstractEffect of thermal annealing on paramagnetic centers in post‐growth hydrogenated GaN0.0081P0.9919 epilayer is examined by means of photoluminescence and optically detected magnetic resonance (ODMR) techniques. In recent studies, several Ga‐interstitial (Gai) related centers were found to be activated by the presence of hydrogen in the hydrogenated GaNP alloys. These centers compete with near‐band edge radiative recombination. Annealing at 400 ºC in Ar‐ambient is found to cause quenching of the Gai‐related ODMR signals that were activated by post‐growth hydrogenation. We tentatively ascribe this effect to dissociation of the H‐Gai complexes and subsequent out‐diffusion of H. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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