Abstract
An analysis of the depletion region that is induced in a semiconductor by a circular nano Schottky contact perpendicular to the electron beam is presented. The electron beam induced current (EBIC) collection efficiency ? was calculated using a Monte Carlo simulation (MCS) approach. The nano Schottky of radius rc is surrounded by a zero or an infinite surface recombination velocity (vs = 0 or vs = ∞). The depletion region of the contact has a hemispherical form of radius zD. The EBIC was obtained by simulating the random diffusion and collection of the minority carriers that are generated at point-like sources Si randomly distributed within the generation volume. The profile of the EBIC collection efficiency versus the distance to the nanocontact is obtained. The results show that the values obtained for vs = 0 are greater than those obtained for vs = ∞ and increase with the increase of zD.
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