Effect of the Surface Nanomorphology on the Growth of Al Whiskers Formed by Glancing Angle Deposition on a High Temperature Substrate

Abstract

ABSTRACTWe have investigated the effect of the substrate-surface morphology on the growth of Al whiskers grown by high temperature glancing angle deposition (HT-GLAD). Before the HT-GLAD of Al at 390 °C, the morphology of the substrate was systematically modified by depositing nanocolumnar SiO2 layer of thickness between 0 and 100 nm on the flat SiO2 layer. Aluminum whiskers with the width of ≈100 nm and the length ≤ μm are found on all the samples. The number of short whiskers, which can be grown from very small nuclei, depends strongly on the thickness of the SiO2 nanocolumnar layer and shows the maximum at SiO2 thickness of 20 nm. On the other hand, the number of long whiskers, which requires extraordinary amount of Al than that deposited on the side surface of the whikers, is almost independent of SiO2 thickness. These facts suggest that the surface roughness of the substrate plays an important role in the nucleation of the whiskers and that there are some transport processes of Al, which are insensitive to the surface morphology.