Abstract
Low-temperature Raman studies of supported graphene are presented. A linear temperature dependence of 2D peak linewidths was observed with the coefficients of 0.036 and 0.033 cm $$^{-1}$$ /K for graphene on copper and glass substrates, respectively, while G peak linewidths remained unchanged throughout the whole temperature range. The different values observed for graphene on glass and copper substrates were explained in terms of the substrate effect on phonon–phonon and electron–phonon interaction properties of the material. The results of the present study can be used to consider substrate effects on phonon transport in graphene for nanoelectronic device engineering.
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