Abstract
The influence exerted by the thermal annealing of silicon, prior to the deposition of a palladium contact, on the hydrogen sensitivity of palladium-〈natural oxide〉-silicon structures was studied. It is shown that structures based on annealed silicon have a much higher sensitivity to hydrogen and a shorter response time when compared with structures based on silicon not subjected to annealing. The results obtained are discussed in terms of structural transformations occurring at the silicon-〈natural oxide〉 interface during thermal treatment.
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