Abstract
Electronic structure is calculated for LaSn 3 by a self-consistent relativistic APW method with the one-electron potential in the local-density approximation. LaSn 3 is a reference for the mixed-valence compound CeSn 3 in which the 4f electrons have recently been proven to be itinerant and contribute directly to the formation of the Fermi surface. Here, the relation between the Fermi surfaces of LaSn 3 and CeSn 3 is investigated. The main Fermi surface of LaSn 3 consists of a distorted hole sphere and a network with slender arms, both of which are connected with small necks. These sheets can explain the de Haas-van Alphen effect and the high-field magnetoresistance reasonably well. The distorted hole sphere in LaSn 3 and the hole sheet in CeSn 3 originate from the eighth band, and look similar to each other. In CeSn 3 , the electron sheet exists as a result of compensation.
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