Abstract
Four kinds of mirror systems were used to investigate the effect of the Ni thin film on the reflectivity of GaN light-emitting diodes after annealing at 200° for 1 h. Samples designated as "ITO/Ag " were ITO/Ag films without Ni layer. "ITO/Ni/Ag " and "ITO/Ag/Ni " were ITO/Ag films with a Ni layer either between the ITO and Ag films, or on the backside of Ag film. "ITO/Ni/Ag/Ni " were ITO/Ag films with Ni layers on both sides of Ag film. It was found that annealed-ITO/Ni/Ag/Ni had the highest reflectivity (96.3%). The thin Ni film could served as a diffusion barrier to retard the in-diffusion of Ag into ITO and the agglomeration of Ag. Therefore annealed-ITO/Ni/Ag/Ni had the highest reflectivity.
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