Abstract
AbstractThe effect of Pt‐diffusion on the electrical properties in the Pt‐diffused MOS structure has been investigated. In these structures, the Pt‐diffusion ambient has a direct effect on the electrical properties;, the samples which were Pt‐diffused in oxygen ambient show a large positive flatband voltage shift, and those which were Pt‐diffused in nitrogen ambient show little flatband voltage shift but have a memory effect. We measured the dependence of flatband voltage on the oxide thickness and evaluated the distribution of the Si‐SiO2 interface state density. We also measured the oxide charge density. From these experimental results, we show that the large shift of the flatband voltage is caused mainly by the charges generated within the oxide film and that the Si‐SiO2 interface state density distribution varies reversibly according to the memory effect.
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