Abstract

For reflection geometry hologram storage in LiNbO 3:Fe, we have shown that the diffraction efficiency increases with doping level and thickness of storage material monotonically. When the acute angle between reference and z-axis is large enough for getting a relative small Bragg angle that is needed for angle multiplexing, smaller angle does good to diffraction efficiency after thermal fixing. And for absorption coefficient, there is an appropriate value responding to optimal diffraction efficiency after thermal fixing and we develop a theoretical model that predicts achievable diffraction efficiency after thermal fixing as a function of crystal thickness, doping level, acute angle between reference and z-axis and absorption coefficient. We compare this model with experiment results and get a good agreement.

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