Abstract
The interfacial Dyzaloshinskii-Moriya interaction (DMI) plays a crucial role in stabilizing a chiral Néel-type magnetic domain wall in perpendicularly magnetized multilayers. In this work, we investigate the effect of oxide layers on interfacial DMI in ultrathin Pt/Co/SmOx and Pt/Co/AlOx stacks with the perpendicular magnetic anisotropy. The DMI effective field was characterized using the field driven domain wall creep and current-induced hysteresis loop shift methods. The experimental results show that an enhanced interfacial DMI is obtained in Pt/Co/SmOx stacks, which may be related to the oxidation degrees of the Co layer in view of the difference of Co/metallic oxide interfaces. Moreover, the X-ray photoelectron spectroscopy with the argon ion etching technique was used to further verify the weaker oxidation of the Co layer existed in Pt/Co/SmOx than that in Pt/Co/AlOx in the same annealing process due to the smaller electronegativity of the Sm compared to the Al element. Our results provide a promising route to effectively manipulate the interfacial DMI in spin-orbit-torque-based spintronic devices through the element electronegativity.
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