Abstract
Cu2ZnSnS4 (CZTS) thin-film solar cells were fabricated using Cu/Sn/Zn and Cu/SnS/Zn precursors. The precursors were prepared using a magnetron-sputtering system with subsequent annealing (sulfurization) in a sulfur atmosphere. Sulfurization was carried out at 580 °C for 1 h in an H2S/N2 environment at atmospheric pressure. The growth behavior of CZTS thin films with different precursors during sulfurization was investigated and their properties were analyzed using X-ray diffraction, scanning electron microscopy with energy-dispersive spectroscopy, and Raman spectroscopy. The CZTS thin film sulfurized using the Cu/Sn/Zn metallic precursor exhibited inhomogeneous growth with detrimental secondary phases, including Cu2S and ZnS, resulting in significant degradation in Voc, Jsc and FF. In contrast, the CZTS thin film formed using a Cu/SnS/Zn precursor showed uniform growth without secondary phases on the surface and 4.1% power conversion efficiency, which was greater than that of the solar cell formed with the metallic precursor.
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