Abstract
The distribution of the electric field in planar GaAs structures made up of a thin film and semi-insulating compensated substrate is considered allowing for the impact ionization of deep traps in the substrate near the film–substrate interface. It is shown that there exists a critical film thickness below which the impact ionization of deep traps can make the film exhibit a long-length region of a uniform electric field exceeding the threshold of N-type negative differential mobility without recourse to special doping profiles.
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