Abstract
Abstract CuInS 2 films were deposited by spray pyrolysis method at 250 °C and 350 °C using aqueous solutions of CuCl 2 , InCl 3 and SC(NH 2 ) 2 at molar ratio of precursors Cu:In:S=1:1:3 in spray solution. Films were characterized by X-ray diffraction (XRD), Raman and X-ray photoelectron spectroscopy (XPS) techniques. According to XPS, the films grown at 350 °C have Cu 2+ containing pieces on the surface, the film composition in bulk region is not homogeneous and contains metal bonded oxygen in amount of 5-8 at.%. Deposition at 250 °C reduces the content of oxygen down to ∼ 1 at. %, the films are low-crystalline with uniform distribution of the elements throughout the film and contain some excess of sulfur compared to stoichiometric CuInS 2 .
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