Abstract
The effect of the Ge mole fraction in a Si1-xGex on single and dual channel Vertical Strained SiGe Impact Ionization MOSFET was successfully analyzed. It is found that the threshold voltage, breakdown voltage and sub-threshold slope of the devices was affected by the presence of the Germanium. A better performance in sub-threshold voltage of the devices was obtained for dual channel VESIMOS compared to single channel VESIMOS with a suitable amount of Germanium. Germanium has high and symmetric impact ionization rates to ensure the transition from OFF state to ON state is abrupt. With the appearance of the SiGe layer in the devices, has an advantage of the mobility enhancement of carriers in the devices operation. With the improvement of the Ge composition, it could transform VESIMOS into a new paradigm of devices which applicable to nanoelectronics with better electrical characteristics.
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