Abstract
Device performances of GaN-based flip-chip light-emitting diodes (FC LEDs) with planar and patterned sapphire substrates (PSS) were compared in this study. It was found that for the FC LED with planar sapphire, enhancement factor of luminous intensity can be raised to 107.5% after the processes of substrate removal and surface roughening. By contrast, for the FC LED with PSS, the intensity enhancement factor is already up to 169.5% without any post-processes as compared with the intensity of an as-fabricated conventional FC LED. Further intensity improvement to 205.1% can be achieved for the FC LED with PSS by employing subsequent processes such as substrate removal and surface roughening. These results indicate that the PSS approach is useful in improving light extraction of a nitride-based FC LED.
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