Abstract
The electrical properties of the Sb/Zn/Au/Nb ohmic contacts to p-type InP were investigated, where a slash (/) indicates the deposition sequence. The first Sb layer improved the contact resistivity and reduced the optimum annealing temperature, compared with the Au/Zn/Au/Nb contacts whose first layer was Au. The minimum contact resistivity of 4×10−5 Ω cm2 was obtained from the Sb(3 nm)/Zn(5 nm)/Au(10 nm)/Nb(50 nm) contacts annealed at 325 °C for 2 min. The interfacial microstructure was studied using the cross-sectional transmission electron microscope. It was considered that the deposited Sb deoxidized and removed the native oxides of the InP surface and that facilitated the upper Au and Zn diffusion into InP.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
