Abstract
The Ti4O7 Magneli phase was grown on a Pt substrate by reactive DC magnetron sputtering. Resistive switching of a Ti4O7 thin film was tested with the three different electrode materials of Ti, W, and Pt. The electrical characteristics revealed ohmic contact with a Ti or W top electrode on the Ti4O7/Pt, while the Pt/Ti4O7/Pt structure showed the characteristics of a diode in a pristine state and unipolar resistive switching behavior after a soft breakdown. The resistive switching behavior of Pt/Ti4O7/Pt was found to be related to the formation of an amorphous Ti-Pt-O layer which originated from the intermixing of Pt with Ti4O7.
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