Abstract
We study in this paper the intersubband optical absorption of Si doped GaAs layer for different applied electric fields and donors concentration. The electronic structure has been calculated by solving the Schr?dinger and Poisson equations self-consistently. From our results, it is clear that the subband energies and intersubband optical absorption are quite sensitive to the applied electric field. Also our results indicate that the optical absorption depends not only on the electric field but also on the donor’s concentration. The results of this work should provide useful guidance for the design of optically pumped quantum well lasers and quantum well infrared photo detectors (QWIPs).
Highlights
In the present paper, we investigate theoretically the electronic structure of Si - doped GaAs using a selfconsistent procedure to solve Schrödinger and Poisson equations simultaneously
We study in this paper the intersubband optical absorption of Si - doped GaAs layer for different applied electric fields and donors concentration
It is clear that the subband energies and intersubband optical absorption are quite sensitive to the applied electric field
Summary
We investigate theoretically the electronic structure of Si - doped GaAs using a selfconsistent procedure to solve Schrödinger and Poisson equations simultaneously. In addition to the electric field we studied the effect of the donor’s concentration on the optical absorption; we conclude that the intersubband transitions are quite sensitive to the applied electric field and to the donor’s concentrations
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