Effect of the dielectric function and pressure on the binding energies of excitons in GaAs and GaAs/Ga1−xAlxAs superlattices

Abstract

The binding energies of a Wannier exciton in bulk GaAs (3D) have been studied as a function of pressure. The effects of the dielectric screening on the binding energies of this exciton in Q1D and Q2D systems are investigated next. While the binding energies of the ground state of the exciton in all these systems increase with pressure, the dielectric screening has appreciable effect on the binding energies in a Q1D system for small well widths.