Abstract
The performance of different platinum electrodes used as resistive heating elements was studied. Pt films having different thickness were deposited by RF magnetron sputtering at room temperature followed by post-deposition annealing at 700 ºC or made in-situ at 700 ºC. The Pt films were deposited over oxidized silicon, using Ti or Zr buffer layers. The resistance dependence on temperature was studied by applying increasing currents (up to 2A) to the Pt films. Changes in the microstructure of the Pt films account for the changes in the temperature coefficient of resistance as a function of the deposition parameters. The maximum substrate temperature (675 ºC) was obtained when using 200 nm Pt films deposited at 700 ºC over Ti, with a power consumption of only 16 W.
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