Effect of the degree of high power impulse magnetron sputtering utilisation on the structure and properties of TiN films

Abstract

TiN films were deposited using high power impulse magnetron sputtering (HIPIMS) enabled four cathode industrial size coating system equipped with HIPIMS power supplies. The standard version of this system allows control over the ion bombardment during coating growth by varying the strength of the electromagnetic field of the unbalancing coils and bias voltage applied to the substrate. The coatings were produced in different coating growth conditions achieved in combined HIPIMS — direct current (dc) unbalanced magnetron sputtering (HIPIMS/UBM) processes where HIPIMS was used as an additional tool to manipulate the ionisation degree in the plasma. Four cathode combinations were explored with increasing contribution of HIPIMS namely 4UBM (pure UBM), 1HIPIMS+3UBM, 2HIPIMS+2UBM and 2HIPIMS (pure HIPIMS) to deposit TiN coatings. Optical emission spectroscopy (OES) measurements were carried out to examine the plasma generated by the various combinations of HIPIMS and UBM cathodes. The micro-structural study was done by scanning electron microscopy (SEM). X-ray diffraction (XRD) technique was used to calculate the residual stress and texture parameter. It has been revealed that the residual stress can be controlled in a wide range from −0.22GPa to −11.67GPa by intelligent selection of the degree of HIPIMS utilisation, strength of the electromagnetic field of the unbalancing coils and the bias voltage applied to the substrate while maintaining the stoichiometry of the coatings. The effect of the degree of HIPIMS utilisation on the microstructure, texture and residual stress is discussed. Combining HIPIMS with dc-UBM sputtering is also seen as an effective tool for improving the productivity of the deposition process.