Abstract
Epitaxial layers of GaInNAs quaternary alloys were grown by metal-organic chemical-vapor epitaxy. The structure of the layers was studied using X-ray diffraction and secondary-ion mass spectrometry, and their optical properties were investigated by photoluminescence and photocurrent measurements. GaInNAs layers lattice-matched to GaAs were grown. At lattice mismatches smaller than 10−4, the layers show strong photoluminescence; at larger mismatches, the photoluminescence is quenched.
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