Abstract
Epitaxial layers of GaInNAs quaternary alloys were grown by metal-organic chemical-vapor epitaxy. The structure of the layers was studied using X-ray diffraction and secondary-ion mass spectrometry, and their optical properties were investigated by photoluminescence and photocurrent measurements. GaInNAs layers lattice-matched to GaAs were grown. At lattice mismatches smaller than 10−4, the layers show strong photoluminescence; at larger mismatches, the photoluminescence is quenched.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.