Abstract
The effect of the [Ga]/[In+Ga] ratio of gallium and indium on the microwave photoconductivity of Cu–In–Ga–Se (CIGSe) films and on the efficiency of solar cells fabricated in accordance with the same technology is investigated. According to the observations of a field-emission scanning electron microscopy (FESEM), the grain size decreases with increasing Ga content. With increasing gallium content in the samples, the photogenerated-electron lifetime and the activation energy of the microwave photoconductivity also decrease. The changes in the activation energy of the through conduction in darkness are less than 20%. Analysis of the obtained data shows that the known effect of the gallium gradient on the efficiency should be associated with modification of the internal structure of grains instead of with their boundaries.
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