Abstract
The effect of the carrier gases H 2 or a N 2/H 2 (90%/10%) mixture with the group-V precursors TBA, TBP, PH 3 and AsH 3 on the distribution coefficient of Zn in InP and In 0.54Ga 0.46As has been investigated. Changing from PH 3 to TBP as the group-V precursor increases the incorporation efficiency of Zn, whereas the opposite effect is observed for the change from AsH 3 to TBA. Furthermore, for In 0.54Ga 0.46As and InP the distribution coefficient of Zn increases and is less sensitive to V/III ratio variations when using N 2/H 2 (90%/10%) as carrier gas instead of H 2.
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