Abstract
The influence of the high-temperature (T = 1880°C) diffusion of beryllium ions on the properties of single-crystal aluminum nitride is studied. It is shown that the postgrowth doping of AlN with Be brings about the compensation of shallow Si donor centers uncontrollably incorporated into the AlN lattice during growth. It is established that the introduction of Be into the AlN lattice results in a reduction in the optical absorption of AlN in the visible and ultraviolet regions. The set of results is attributed to a shift of the Fermi level to the top of the valence band of AlN upon the introduction of the Be acceptor impurity.
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