Abstract
The conduction mechanisms governing the dark current-voltage characteristics of a-SiC:H/a-Si:H/c-Si pin heterojunction diodes are determined by the use of an electrical model. In particular, the influence of the a-SiC:H thickness layer on the conduction mechanisms is studied. For a 5 nm thick a-SiC:H layer, the conduction mechanisms of the heterojunction diode are the same than a homojunction Silicon diode.
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