Abstract
Sb2Te3 is a promising candidate for applications in thermoelectric thin film devices, thin film solar cells, and electronic memory devices. This study involved the preparation of SbxTey thin films using radio-frequency magnetron sputtering. By adjusting the argon flow rate and substrate temperature while using a stoichiometric Sb2Te3 sputtering target, different compositions of Sb-Te were achieved. The results revealed that an argon flow rate of 2.5 sccm with a growth temperature of 400 °C led to the formation of the Sb2Te3 compound and suppressed Te aggregates. This elimination of Te as a secondary phase resulted in a high hole density of 2.88×1020 cm−3, a low resistivity of 5.15×10−3 Ω∙cm, and a low bandgap of 0.37 eV. These characteristics make the Sb2Te3 thin films suitable as buffer layers in CdTe-based solar cells and thermoelectric devices.
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