Abstract
Tin dioxide doped silver oxide thin films with different x content (0, 0.03, 0.05, 0.07) have been prepared by pulse laser deposition technique (PLD) at room temperatures (RT). The effect of doping concentration on the structural and electrical properties of the films were studied. Atomic Force Measurement (AFM) measurements found that the average value of grain size for all films at RT decrease with increasing of AgO content. While an average roughness values increase with increasing x content. The electrical properties of these films were studied with different x content. The D.C conductivity for all films increases with increasing x content. Also, it found that activation energies decrease with increasing of AgO content for all films. Hall measurements confirmed that all the intrinsic films are n-type charge carriers. The variation of carriers concentration increase with increasing x content. Hall mobility decreasing with increasing x content for all films. Also the variation of Drift velocity, carrier life time and free mean path decrease with increasing of x content.
Highlights
Tin dioxide (SnO2) is n-type wideband gap semiconductor (Eg= 3.6 eV) [1]
We have focused our attention to investigate the effect of AgO on the surface morphology and electrical properties of SnO2 thin films using the pulse laser deposition method (PLD) at room temperatures (RT) using Nd:YAG laser with λ=1064 nm, average frequency 6 Hz and pulse duration 15 ns on glass substrate
From studying the electrical properties of films deposited on glass with different x content, we found that D.C conductivity increases with increasing x content
Summary
Tin dioxide (SnO2) is n-type wideband gap semiconductor (Eg= 3.6 eV) [1]. Some unique properties of SnO2 such as; high electrical conductivity, high transmittance in the ultraviolet (UV)– visible (VIS) region, high infrared reflectance, abundance in nature and absence of toxicity [2]. Key words SnO2: Ago thin films, structural properties, electrical properties, PLD technique. We have focused our attention to investigate the effect of AgO on the surface morphology and electrical properties of SnO2 thin films using the pulse laser deposition method (PLD) at room temperatures (RT) using Nd:YAG laser with λ=1064 nm, average frequency 6 Hz and pulse duration 15 ns on glass substrate. Experimental part Thin films of SnO2 doped with AgO
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