Abstract

Polycarbosilane (PCS) has been widely used to fabricate silicon carbide (SiC) fibers via pyrolysis. In this paper, for improving the morphology of SiC fibers, tetraethyl orthosilicate (TEOS, m = 1 g, 3 g and 5 g, respectively) was added into the PCS precursor solution (containing 1.5 g PCS). The continuous fibers have been prepared by electrospinning, and then the SiC fibers were synthesized by calcination at 1300 °C, 1400 °C and 1600 °c for 4 h respectively with a heating rate of 10 °C/min in flowing nitrogen (N2). The morphologies of the fibers were investigated by the scanning electron microscope (SEM) and it could be seen that the crystallinity of the SiC fibers was lower, the length of the SiC fibers was increased, and the diameter was uniform with the increase of the addition amount of TEOS.

Highlights

  • In the past decade, one-dimensional (1D) nanosized semiconducting materials have attracted attention with their fascinating optical, electronic and chemical properties

  • The scanning electron microscope (SEM) images of the silicon carbide (SiC) fibers calcined at 1300 °C and the corresponding columnar section of the diameter uniformity with different amounts of tetraethyl orthosilicate (TEOS)

  • The diffraction peaks of products become weak and broad which indicates that the crystallinity is lower and the grain size in SiC fibers is decreased with the increase d(a) 0 g d(b) 1 g d(c) 3 g d(d) 5 g

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Summary

Introduction

One-dimensional (1D) nanosized semiconducting materials have attracted attention with their fascinating optical, electronic and chemical properties. The size and morphology can affect their applications as catalysts, solar cells, light-emitting diodes and biological labeling [1,2,3]. Silicon carbide (SiC) possesses excellent physical and electronic properties such as high mechanical strength, high thermal stability and high thermal conductivity [4]. It has wide applications including field emission displays, nano-sensors and other nanoscale devices [5,6]. Much more effort has been devoted to the synthesis process of SiC fibers with nanostructures,

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