Effect of temperature on the Ge/GaAs(110) interface formation

Abstract

The initial growth, by a molecular beam epitaxy technique, of a Ge overlayer on a clean cleaved GaAs(110) heated substrate is studied in ultrahigh vacuum by low energy electron diffraction, Auger electron spectroscopy and photoemission yield spectroscopy. The effect of the substrate temperature on the crystallography, the composition and the electronic structure at both the Ge/GaAs interface and the Ge surface is analysed with particular emphasis on the 350°C range where segregation is observed upon interface formation.