Effect of temperature on the formation of silicon nanoislands on noncrystalline substrates in microwave low-pressure gas discharge plasma

Abstract

Conditions for the synthesis of nanodimensional silicon islands on noncrystalline substrates in microwave low-pressure gas discharge plasma have been studied in the case of weak interactions at the deposit-substrate interface. It is established that the formation of silicon nanoislands proceeds via the overgrowth (healing) of depressions on the initial substrate surface. The effect of temperature on the kinetics of nanoisland growth and the possibilities of controlling the parameters of nanoisland morphology are determined.