Abstract
We investigate the effects of temperature on the built-in electric field in a modulation-doped GaAs GaAℓAs heterojunction by using the photoreflectance technique. Franz-Keldysh oscillations-like structures are observed above the GaAs band gap and the magnitude of the electric field as a function of temperature are evaluated. By performing theoretical self-consistent calculations, taking into account temperature effects, the interface potential profiles and electric fields are obtained. The agreement between the calculated electric fields at the Fermi level and the values extracted from experiment indicates that the observed FK oscillations are due to the electric field at the heterojunction.
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