Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3**Project supported by National Key Research and Development Plan of China (Grant Nos. 2016YFB0400600 and 2016YFB0400601), the National Natural Science Foundation of China (Grant Nos. 61574026, 11675198, 61774072, and 11405017), the Natural Science Foundation of Liaoning Province, China (Grant Nos. 201602453 and 201602176), China

Abstract

A solar-blind photodetector is fabricated on single crystal Ga2O3 based on vertical structure Schottky barrier diode. A Cu Schottky contact electrode is prepared in a honeycomb porous structure to increase the ultraviolet (UV) transmittance. The quantum efficiency is about 400% at 42 V. The Ga2O3 photodetector shows a sharp cutoff wavelength at 259 nm with high solar-blind/visible (=3213) and solar-blind/UV (=834) rejection ratio. Time-resolved photoresponse of the photodetector is investigated at 253-nm illumination from room temperature (RT) to 85.8 °C. The photodetector maintains a high reversibility and response speed, even at high temperatures.