Abstract
The effect of temperature on steady-state photoconductivity and its relaxation after illumination cut-off in lightly boron-doped microcrystalline hydrogenated silicon films has been studied. The measurements were performed in the temperature range 150–430 K with an incident photon energy of 1.4 eV. The temperature dependences of the photoresponse time and drift mobility in microcrystalline silicon have been obtained from the data on the steady-state photoconductivity and its decay. Mechanisms of carrier transport and recombination that governing these temperature dependences are discussed.
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