Abstract
The high-temperature dielectric and microwave-absorption properties of Ti3SiC2/NASICON coating have been rarely reported. The coating was fabricated by atmospheric plasma spraying in this work for study of dielectric and microwave-absorption properties from 25°C to 500°C. Results showed that the complex permittivity increased with elevated temperature due to the dielectric relaxation, space charge polarization, thermal ion relaxation polarization and conduction loss. When the temperature ranged from 200°C to 500°C, the coating exhibited a good microwave-absorption property with a wide bandwidth (below −5 dB) with a thickness less than 2 mm, which indicated that Ti3SiC2/NASICON coating can be chosen as a potential candidate of high-temperature microwave-absorption material.
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