Abstract
In the present work the influence of temperature on the intensity of light as well as the forward bias current–voltage (I–V) characteristics of a GaP-based green light emitting diode has been investigated in the temperature range from 350 to 77 K. It is remarkable to note that our experimental results reveal about a 52% increase in luminous intensity, when the temperature is lowered from 350 to 77 K. We have tried to explain the nature of this variation in terms of the existing relations. From the semilog I–V curves it is also observed that the corresponding slopes above the threshold voltage do not appreciably change with temperature. This observation indicates that the transport is dominated by tunneling mechanism. For such tunneling mechanism the tunneling probability (Pt) for different kinds of carriers can be described by a horizontal tunneling model for the device.
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