Abstract
Doped zinc oxide phosphors were synthesized and excited by high-peak power pulsed UV laser at room temperature as well as at liquid nitrogen temperature. There is considerable decrease in the values of life-time at low temperature (77 K), whereas mixed trend is observed in life-time values with change in concentration of didymium, which indicates the perturbation effect in host material. The increased fluorescence quantum yield, emission efficiency and down-conversion phenomena of these selective radiative transitions, in doped phosphors, make them a very promising material for laser medium, vacuum fluorescent displays, fluorescent lamps, information storage and optoelectronic industry.
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