Effect of temperature on elasticity of P doped silicon nanowires

Abstract

ABSTRACTA semi-continuum approach is developed for mechanical analysis of a Phosphorus (P) doped silicon nanowire. Young's modulus of the silicon (001) nanowire with different size along [100] direction is obtained by the developed semi-continuum approach. The results show that Young's modulus of the P doped silicon nanowire decreases dramatically as the size of the width and thickness scaling down. The approach is extended to perform a mechanical analysis of the silicon nanowire at finite temperature. The dependence of young's modulus of the P doped silicon nanowire on temperature is predicted, and it exhibits a negative temperature coefficient.