Abstract
The reaction kinetics of copper indium diselenide formation is studied by measuring species composition as a function of time at 250°C and 325°C in a tubular chemical vapor deposition reactor. This extends our previous modeling and experimental study at 400°C. The initial copper–indium alloy is analyzed at the reaction temperatures using high-temperature X-ray diffraction measurements. This modifies the understanding of the chemistry of the copper indium growth kinetics and a new set of model equations is presented. The specific reaction rate constants and activation energies for the chemical reactions are obtained, enabling one to calculate the holding time for the reaction. © 1997 John Wiley & Sons, Ltd.
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