Effect of temperature on conversion of basal plane dislocations to treading edge dislocations during 4H-SiC homoepitaxiy

Abstract

Abstract 4H-SiC homoepitaxial layer grown on 4° off-axis substrates is performed at various growth temperature by using the traditional chemical vapor deposition. The effect of growth temperature on propagation of basal plane dislocations from substrate to epitaxy was studied using the deep KOH etching and Synchrotron reflection X-ray topography, and the conversion mechanism was also investigated. It is found that the majority basal plane dislocations are converted to threading edge dislocations during epitaxial growth. Meanwhile, the two types of threading edge dislocations in epitaxial layer are observed after KOH etch. By the optimization of growth temperature, high quality epitaxial wafer with extremely low basal plane dislocations density (