Abstract
We have grown β- FeSi2 single crystals by the temperature modulated TGSG method using Ga solvent and Fe0.98Co0.02Si2 solute to observe the solution growth process. Growth striations corresponded to the temperature modulation cycles were clearly observed in the β- FeSi2 crystals grown using Fe0.98Co0.02Si2 solute, whereas they were not observed in the crystals grown using FeSi2 solute. SEM-EDX measurements revealed the striation was caused by the fluctuation of Co impurity. From the observation of striations, we found that the growth mechanism of β- FeSi2 would be explained by the constant growth rate model and also the growth rates along 〈011〉 and 〈010〉 directions were larger than that of 〈001〉 direction.
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