Abstract
The p-n junction GaN diodes were all fabricated by sputtering technique with cermet targets for p- and n-type GaN and metal targets for electrodes. The interface of these p-n junction GaN diodes examined by high-resolution transition electron microscopy was clear and distinguishable. Lattice images identified the complete dissolution of Mg into the Ga site. At the room temperature, the diode had the turn-on voltage of 2.2 V, the leakage current of 2.2 × 10–7 A, the breakdown voltage of –6 V, the barrier height of 0.56 eV, ideality factor of 5.0 by I (current)-V (voltage) test and 5.2 derived from the Cheungs’ method, and series resistance of 560 Ω. These electrical properties were investigated at different testing temperatures from room temperature to 200°C. The temperature dependence in the I-V characteristics of the p-n diodes can be successfully explained on the basis of thermionic-emission mode.
Highlights
GaN material is one of the important semiconductors for high-power electronics due to its wide band gap characteristics
It is noted that the ideality factor n decreases whereas the barrier increases with the increase in the testing temperature
The current transport will be determined by electrons flowing through the path of lower barrier height and a larger ideality factor
Summary
GaN material is one of the important semiconductors for high-power electronics due to its wide band gap characteristics. In the fabrication of p-n junction LED using nitride semiconductor materials, high efficiency and prevention of thermal degradation to get low turn-on voltages of the device are necessary. Cao et al reported the fabrication of n+-p junction in GaN by implantation of 29Si+ They determined that the breakdown voltage was 13 V at the reverse bias and ideality factor n was ~2 [1]. All the above-mentioned reports have their GaN films grown by the techniques of metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) Some of their excellent performances are established on the GaN layers with the epitaxial quality for LEDs [1] [4] [7]. The electrical I-V characteristics of p-n GaN diodes were determined by the thermionic emission (TE) modeat a wide testing temperature range of 25 ̊C - 200 ̊C
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