Effect of temperature and silicon resistivity on the elaboration of silicon nanowires by electroless etching

Abstract

The morphology of silicon nanowire (SiNW) layers formed by Ag-assisted electroless etching in HF/H2O2 solution was studied. Prior to the etching, the Ag nanoparticles were deposited on p-type Si(100) wafers by electroless metal deposition (EMD) in HF/AgNO3 solution at room temperature. The effect of etching temperature and silicon resistivity on the formation process of nanowires was studied. The secondary ion mass spectra (SIMS) technique is used to study the penetration of silver in the etched layers. The morphology of etched layers was investigated by scanning electron microscope (SEM).