Abstract
A systematic investigation of the experimental conditions for the chemical exfoliation of MoS2 using n-butyllithium as intercalating agent has been carried out to unravel the effect of reaction time and temperature for maximizing the percentage of monolayer thick-flakes and achieve a control over the content of metallic 1T vs. semiconductive 2H phases, thereby tuning the electrical properties of ultrathin MoS2 few-layer thick films.
Highlights
Iwona Janica, abc Daniel Iglesias, c Stefano Ippolito, c Artur Ciesielski *bc and Paolo Samorı *c
A systematic investigation of the experimental conditions for the chemical exfoliation of MoS2 using n-butyllithium as intercalating agent has been carried out to unravel the effect of reaction time and temperature for maximizing the percentage of monolayer thick-flakes and achieve a control over the content of metallic 1T vs. semiconductive 2H phases, thereby tuning the electrical properties of ultrathin MoS2 few-layer thick films
Three strategies are promising for the mass production of one- and few-layer thick MoS2 nanosheets: (1) chemical vapor deposition (CVD) starting from molybdenum and sulfur precursors which are deposited onto appropriate substrates,[17] (2) liquid-phase exfoliation of bulk MoS2 assisted by ultrasounds[18,19] or shear forces,[20] and (3) chemical exfoliation of MoS2 with alkali metals compounds, generally containing Li ions that intercalate the bulk material.[7,8,9,11,13,14,21,22]
Summary
Iwona Janica, abc Daniel Iglesias, c Stefano Ippolito, c Artur Ciesielski *bc and Paolo Samorı *c. A systematic investigation of the experimental conditions for the chemical exfoliation of MoS2 using n-butyllithium as intercalating agent has been carried out to unravel the effect of reaction time and temperature for maximizing the percentage of monolayer thick-flakes and achieve a control over the content of metallic 1T vs semiconductive 2H phases, thereby tuning the electrical properties of ultrathin MoS2 few-layer thick films.
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