Abstract
The effect of temperature and composition dependences of deep level ionization energies in semi-insulating compound semiconductors is investigated and illustrated in the example of the ternary ${\mathrm{Cd}}_{1\ensuremath{-}x}{\mathrm{Zn}}_{x}\mathrm{Te}$ system. Those dependences are determined by the behavior of the band extrema in an absolute energy scale and the actual nature of a particular defect, which controls its relation to the host crystal states. Examples for the interpretation of experimental temperature and composition dependences of critical charge transport parameters are given.
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