Effect of tellurium addition on the physical properties of germanium selenide glassy semiconductors

Abstract

Effect of tellurium (Te) addition on the physical properties, density ( ρ), molar volume ( V m), compactness ( δ), cohesive energy (CE), coordination number ( m), lone pair electrons ( L) and glass transition temperature ( T g) of Ge 10Se 90− x Te x ( x=0, 10, 20, 30, 40, 50) bulk glassy alloy has been investigated. The density of the glassy alloys has been found to increase with the increasing Te content. The molar volume and compactness of the structure of the glass, determined from measured density of the glass, have been found to increase with the increase of Te content. The CE of the investigated samples has been calculated using the chemical bond approach (CBA) and is correlated with decrease in optical band gap with the increase of Te content. The glass transition temperature has been estimated using Tichy–Ticha approach and found to increase with the increase of Te content. This has been observed that the estimated glass transition temperature using Tichy–Ticha approach is not consistent with experimental results.