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Abstract
n-Type (Bi 2Te 3) 0.93(Bi 2Se 3) 0.07 thermoelectric materials doped with various content of TeI 4 (0, 0.05, 0.10, 0.13, and 0.15 wt.%) have been fabricated through the zone melting method. Electrical conductivity ( σ), Seebeck coefficient ( α) and thermal conductivity ( κ) were measured along the crystal growth direction in the temperature range of 300–500 K. The influence of the variations of TeI 4 content on thermoelectric properties was studied. The undoped (Bi 2Te 3) 0.93(Bi 2Se 3) 0.07 exhibited p-type conduction and it translated to n-type when TeI 4 was doped. The increase of TeI 4 content increased the carrier concentration and thus resulted in an increase of σ and a decrease of | α|. The maximum figure of merit ZT (ZT = α 2 σT/ κ) of the zone-melted crystals in the direction parallel to the growth direction showed a value of 0.90 for the sample containing 0.10 wt.% TeI 4.
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