Abstract
The present research was focused to extensively investigate the effect of TaC-coated crucible on the SiC crystal growth and then compare the difference of various properties between SiC crystals grown in conventional graphite crucible and TaC-coated crucible. The bulk growth was conducted around 2200°C of the growth temperature and 40 mbar of an argon atmosphere for the growth pressure. The better crystalline quality was obtained from the crystal grown in TaC-coated crucible. The SiC crystal grown in the TaC-coated crucible exhibited superior characteristics than SiC crystal grown in the conventional crucible in terms of the crystal quality and defect density. Furthermore, nitrogen incorporation in SiC crystal grown in the TaC-coated crucible was definitely decreased.
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