Abstract
The influence on microstructure and electrical properties of Ta-substituted 0.80Pb(Mg 1/3Nb 2/3)O 3–0.20PbTiO 3 (0.80PMN–0.20PT) ceramics has been investigated. The grain size decreases with Ta concentration increases. The sample with 10 at.% Ta substitution has dense structure and better dielectric and piezoelectric properties, with density ∼7.7 g/cm 3, ε m ∼45,000, k p ∼34% and d 33 ∼158 pC/N. Less or more Ta doping in 0.80PMN–0.20PT ceramics is all harmful to dielectric and piezoelectric properties.
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